This 1.3W P-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP package that is machine-insertable and can be stacked in multiple combinations on standard 0.1in pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- VDSS 60V
- RDS(on) 0.28Ω
- ID 1.6A
- Dynamic dv/dt rating
- Repetitive avalanche rated
- End stackable
- 175°C Operating temperature
- Fast switching
- Ease of paralleling
Note: Previously manufactured under the International Rectifier name.
To find out more about our range of Vishay resistors, diodes, capacitors and switches, please visit our Vishay brand page.
| Channel Type |
P-Channel |
| Drain Current |
1.6A |
| Gate Source Voltage |
20V |
| Drain-Source Breakdown Voltage |
60V |
| Drain-Source On-Resistance |
0.28Ω |
| Package/Case |
HEXDIP |
| Power Dissipation |
1.3W |
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